Nxp Mosfet Selection Guide
Part No.: BLF578. 500MHz ， 50V， 24dB, 1200W. ■ Excellent ruggedness. ◆ Output power = 1200 W. ◆ Power gain = 24 dB. ■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous. Arrow.com is an authorized distributor of NXP Semiconductors, stocking a wide selection of electronic components and supporting hundreds of reference designs. Explore more at Arrow.com.
Nxp Automotive Mosfet
| Номер произв | BF989 | ||||
| Описание | N-channel dual-gate MOS-FET | ||||
| Производители | NXP Semiconductors | ||||
| логотип | |||||
1Page
DATA SHEET N-channel dual-gate MOS-FET File under Discrete Semiconductors, SC07
N-channel dual-gate MOS-FET BF989 • Protected against excessive input voltage surges by and source. • UHF applications such as: – Professional communication equipment. PIN 2 4 DESCRIPTION d drain g1 gate 1 Depletion type field-effect transistor in a plastic SOT143 and substrate. 4 d g1 Top view MAM039 Fig.1 Simplified outline (SOT143) and symbol. SYMBOL CONDITIONS VDS Ptot Yfs Crs drain-source voltage total power dissipation transfer admittance feedback capacitance up to Tamb = 60 °C f = 1 MHz; ID = 7 mA; VDS = 10 V; VG2-S = 4 V f = 800 MHz; GS = 2 mS; BS = BSopt; ID = 7 mA; − − 12 25 MAX. 20 150 − − V mW mS fF April 1991
N-channel dual-gate MOS-FET BF989 In according with the Absolute Maximum Rating System (IEC 134). PARAMETER VDS ID(AV) IG2-S Tstg drain-source voltage average drain current gate 2-source current storage temperature range up to Tamb = 60 °C; note 1 SYMBOL CONDITIONS thermal resistance from junction to ambient in free air; note 1 Note to the Limiting values and the Thermal characteristics 1. Device mounted on a ceramic substrate of 8 × 10 × 0.7 mm. − − − −65 MAX. 20 ±10 200 150 V mA mA °C VALUE UNIT handboo2k,0h0alfpage (mW) MGE792 0 100 200 Fig.2 Power derating curve. 3 | |||||
| Всего страниц | 8 Pages | ||||
| Скачать PDF | [ BF989.PDF Даташит ] | ||||