Cree’s New 650V MOSFETs Offer Industry-leading Efficiency to Enable the Next Generation of Electric Vehicles, Data Centers and Solar Innovations
Wolfspeed's new 650V Series of SiC MOSFETs are designed to withstand the demands of today’s high-powered applications with improved efficiency and performance. Wolfspeed’s new 650V Series of SiC MOSFETs offer the industry’s lowest on-state resistances and switching losses for higher-efficiency and power-dense solutions. Toshiba Releases 650V Super Junction Power MOSFETs in TOLL Package that Help Improve Efficiency of High Current Equipment. Toshiba Electronic Devices & Storage Corporation Announces Major Investment in Power Devices Business.
- Silicon Carbide 650V MOSFET Family. Wolfspeed’s 3rd Generation silicon carbide 650V MOSFET technology is optimized for high performance power electronics applications, including server power supplies, electric vehicle charging systems, energy storage systems, Solar.
- The 650V CoolMOS™ C7 series brings a new level of performance in hard switching applications such as power factor correction (PFC) when additional 50V of breakdown voltage is needed versus 600V CoolMOS™ C7. It provides efficiency benefits across the whole load range through balancing a number of key parameters.
Wolfspeed technology harnesses silicon carbide’s superior performance for broader range of industrial power applications
DURHAM, N.C. – Cree (Nasdaq: CREE), the global leader in silicon carbide technology, today announced the expansion of its product portfolio with the release of the Wolfspeed®650V silicon carbide MOSFETs, delivering a wider range of industrial applications and enabling the next generation of Electric Vehicle (EV) onboard charging, data centers, and other renewable systems with industry-leading power efficiency.
“Cree is leading the global transition from silicon to silicon carbide, and our new 650V MOSFET family is the next step in delivering a high-powered solution to a broader application base, including industrial applications everywhere,” said Cengiz Balkas, senior vice president and general manager of Wolfspeed. “The 650V MOSFETs deliver power efficiencies that help today’s biggest technology leaders create the next generation of onboard EV charging, data centers, and energy storage solutions to reshape our cloud and renewable energy infrastructures.”
The new 15 mΩ and 60 mΩ 650V devices, which use Cree’s industry-leading, third generation C3M™ MOSFET technology, deliver up to 20 percent lower switching losses than competing silicon carbide MOSFETs and provide the lowest on-state resistances for higher efficiency and power dense solutions. End users benefit from lower total cost of ownership in a variety of applications through the more efficient use of power, reduced cooling requirements, and industry-leading reliability.
Compared to silicon, Wolfspeed’s new 650V silicon carbide MOSFETs deliver 75 percent lower switching losses and a 50 percent decrease in conduction losses which results in a potential 300 percent increase in power density. Design engineers can now meet and exceed the industry’s most ambitious efficiency standards, including 80 Plus® Titanium requirements for server power.
The new 650V MOSFET family is also ideal for on-board chargers (OBCs) in the electric vehicle (EV) market. The increased efficiencies and faster switching allow customers to design smaller solutions with added performance. Wolfspeed’s 650V silicon carbide MOSFETs also enable bi-directionality in OBCs without compromising the size, weight and complexity of the solution. Furthermore, Wolfspeed’s experience with automotive AEC-Q101 qualification, proven in the E-series MOSFET family, paves the way for future automotive qualified 650V MOSFETs.
Other industrial applications, such as general-purpose switched mode power supplies (SMPS), will also be able to take advantage of the many benefits of the new 650V silicon carbide MOSFETs from the largest, global and vertically integrated supplier of silicon carbide technologies.
Wolfspeed’s 650V silicon carbide MOSFETs are available now in surface mount and through-hole packages. Visit https://www.wolfspeed.com/650v-mosfets for more information.
About Cree, Inc:
Cree is an innovator of Wolfspeed® power and radio frequency (RF) semiconductors and lighting class LEDs. Cree’s Wolfspeed product portfolio includes silicon carbide materials, power-switching devices and RF devices targeted for applications such as electric vehicles, fast charging, inverters, power supplies, telecom and military and aerospace. Cree’s LED product portfolio includes blue and green LED chips, high-brightness LEDs and lighting-class power LEDs targeted for indoor and outdoor lighting, video displays, transportation and specialty lighting applications.
For additional product and company information, please refer to www.cree.com.
Forward Looking Statements:
This press release contains forward-looking statements involving risks and uncertainties, both known and unknown, that may cause actual results to differ materially from those indicated. Actual results may differ materially due to a number of factors, including the risk that Cree may be unable to manufacture these products with sufficiently low cost to offer them at competitive prices or with acceptable margins; the risk Cree may encounter delays or other difficulties in ramping up production of its capacity to supply these products; customer acceptance of these new products; the rapid development of new technology and competing products that may impair demand or render Cree’s products obsolete; and other factors discussed in Cree’s filings with the Securities and Exchange Commission, including its report on Form 10-K for the year ended June 30, 2019, and subsequent filings.
Media Contact:
Claire Simmons
Cree, Inc.
csimmons@cree.com
919 407 7844
Cree® and Wolfspeed® are registered trademarks and C3M™ is a trademark of Cree, Inc. 80 Plus® is a registered trademark of Clearesult Consulting Inc.
This is one of the MOSFET types. This is a kind of the transistor.
Part Number : SVF7N65F, SVF7N65T
Function : 650V, 7A, N-CHANNEL MOSFET Transistor
Package : TO-220F, TO-220 Type
Manufactures : Silan Microelectronics
Images :
Description :
SVF7N65T / SVF7N65F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.
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Cree 650v Mosfet
Features
1. 7A,650V,RDS(on)(typ)=1.1 Ω @VGS=10V
2. Low gate charge
3. Low Crss
4. Fast switching
5. Improved dv/dt capability
Pinout
Sic Mosfet 650v
Absolute Maximum Ratings (Tc = 25°C)
1. Drain-Source Voltage : VDS = 650 V
2. Gate-Source Voltage : VGS = ±30 V
3. Drain Current : Id = 7 A
4. Power Dissipation : 46 W
5. Channel temperature : Tch = -55 to +150 °C
6. Storage temperature : Tstg = -55 to +150 °C
SVF7N65F Datasheet
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